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| NTE2547 (NPN) & NTE2548 (PNP) Silicon Complementary Transistors Darlington Driver Features: D High DC Current Gain D High Current Capacity and Wide ASO D Low Saturation Voltage Applications: D Motor Drivers D Printer Hammer Drivers D Relay Drivers D Voltage Regulator Control Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE fT Test Conditions VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 4A VCE = 5V, IC = 4A Min - - - Typ - - 20 Max 0.1 3.0 - Unit mA mA MHz 1500 4000 Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector to Emitter Saturation Voltage NTE2547 NTE2548 Base to Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Turn-On Time NTE2547 NTE2548 Storage Time NTE2547 NTE2548 Fall Time NTE2547 NTE2548 tf tstg VBE(sat) IC = 4A, IB = 8mA V(BR)CBO IC = 5mA, IE = 0 V(BR)CEO IC = 50mA, RBE = ton IC = 4A, IB1 = 500mA, IB2 = -500mA, Pulse Width = 50s, Duty Cycle 1%, Note 1 Symbol VCE(sat) Test Conditions IC = 4A, IB = 8mA Min - - - 110 100 - - - - - - Typ 0.9 1.0 - - - 0.6 0.7 4.8 1.4 1.6 1.5 Max 1.5 - 2.0 - - - - - - - - Unit V V V V V s s s s s s Note 1. For NTE2548 (PNP), the polarity is reversed. NTE2547 (NPN) C B .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2) .173 (4.4) Max .114 (2.9) Max E NTE2548 (PNP) C B .531 (13.5) Min B C E .100 (2.54) E .059 (1.5) Max NOTE: Tab is isolated |
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